000 02283cam a22002895a 4500
001 16175546
003 IIITD
005 20220920020003.0
008 100407s2010 si a b 001 0 eng
010 _a 2010287231
020 _a9789814745567
040 _aDLC
_cDLC
082 _a621.381
_bHOE-I
100 1 _aHoekstra, Jaap
245 1 0 _aIntroduction to nanoelectronic single-electron circuit design
_cJaap Hoekstra
250 _a2nd ed.
260 _aSingapore :
_bPan Stanford,
_c©2016.
300 _axix, 328 p. :
_bill. ;
_c24 cm.
504 _aIncludes bibliographical references (p. 289-292) and index.
505 2 _aIntroduction -- Tunneling experiments in nanoelectronics -- Current in electrodynamics and circuit theory -- Free electrons in quantum mechanics -- Current and tunnel current in quantum physics -- Energy in circuit theory -- Energy in the switched two-capacitor circuit -- Impulse circuit model for single-electron tunneling--zero tunneling time -- Impulse circuit models for single-electron tunneling--nonzero tunneling times -- Generalizing the theory to multi-junction circuits -- Single electron tunneling circuit examples -- Circuit design methodologies -- More potential applications and challenges.
520 1 _a"The author employs an unconventional approach in explaining the operation and design of single-electron circuits. All models and equivalent circuits are derived from first principles of circuit theory. This is a must if we want to understand the characteristics of the nanoelectronic devices and subcircuits. Besides this, a circuit theoretical approach is necessary for considering possible integration in current and future IC technology. Based on energy conservation, in circuit theory connected to Tellegen's theorem, the circuit model for single-electron tunneling is an impulsive current source. Modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a tunnel junction, no of an island."--P.[ 4] of cover.
650 0 _aNanoelectronics.
650 0 _aIntegrated circuits
_xDesign and construction.
906 _a0
_bibc
_corigres
_d2
_encip
_f20
_gy-gencatlg
942 _2ddc
_cBK
_01
999 _c13920
_d13920