000 | 01009cam a22003134a 4500 | ||
---|---|---|---|
001 | 16538095 | ||
003 | IIITD | ||
005 | 20240430020003.0 | ||
008 | 101115s2012 nyua 001 0 eng | ||
010 | _a 2010045765 | ||
020 | _a9780071070102 | ||
035 | _a(OCoLC)ocn681739179 | ||
040 |
_aDLC _cDLC _dCDX _dYDXCP _dCLE _dSTF _dDLC |
||
042 | _apcc | ||
050 | 0 | 0 |
_aQC611 _b.N39 2012 |
082 | 0 | 0 |
_a537.622 _222 _bNEA-S |
100 | _aNeamen, Donald A. | ||
245 | 1 | 0 |
_aSemiconductor physics and devices : _bbasic principles _cby Donald A. Neamen. |
250 | _a4th ed. | ||
260 |
_aNew York : _bMcGraw Hill, _c©2012. |
||
300 |
_axxiv, 758 p. : _bill. ; _c24 cm. |
||
500 | _aIncludes index. | ||
504 | _aIncludes bibliographical references and index. | ||
650 | 0 | _aSemiconductors. | |
700 | _aBiswas, Dhrubes | ||
906 |
_a7 _bcbc _corignew _d1 _eecip _f20 _gy-gencatlg |
||
942 |
_2ddc _cBK _020 |
||
999 |
_c170614 _d170614 |