000			02015cam a22004577a 4500
001			14684026
005			20210302020003.0
008			070103s2007 nyua b 001 0 eng d
010			_a 2007920040
015			_aGBA816762 _2bnb
015			_a06,N23,0733 _2dnb
016	7		_a014512950 _2Uk
020			_a9788184892499
035			_a(OCoLC)ocn144517665
040			_aBTCTA _cBTCTA _dBAKER _dYDXCP _dCOO _dIXA _dUKM _dOHX _dCDN _dDEBBG _dDLC
042			_alccopycat
050	0	0	_aTK7874.66 _b.U48 2007
082	0	4	_a621.395
082	0	4	_a621.381 _222 _bITO-U
100			_aItoh, Kiyoo
245	0	0	_aUltra-low voltage nano-scale memories _cedited by Kiyoo Itoh, Masashi Horiguchi, and Hitoshi Tanaka.
260			_aNew York : _bSpringer, _cc2007.
300			_axi, 346 p. : _bill. ; _c25 cm.
490	1		_aSeries on integrated circuits and systems
504			_aIncludes bibliographical references and index.
505	0		_aAn Introduction to LSI Design.- Challenges and Trends of Low-Voltage Nano-Scale LSIs.- Leakage Reduction for RAMs.- Reduction of Performance Variations.- Reference Voltage Generators.- Voltage Down-Converters.- Voltage Up-Converters and Negative Voltage Generators.
650		0	_aLow voltage integrated circuits.
650	0	7	_aLSI. _2swd
650	0	7	_aNanoelektronik. _2swd
650	0	7	_aSpeicher (Informatik) _2swd
700	1		_aHoriguchi, Masashi.
700	1		_aTanaka, Hitoshi.
830		0	_aSeries on integrated circuits and systems.
856	4		_qtext/html _uhttp://deposit.ddb.de/cgi-bin/dokserv?id=2809079&prov=M&dok%5Fvar=1&dok%5Fext=htm _3Inhaltstext
856	4	2	_3Publisher description _uhttp://www.loc.gov/catdir/enhancements/fy0824/2007920040-d.html
856	4	1	_3Table of contents only _uhttp://www.loc.gov/catdir/enhancements/fy0824/2007920040-t.html
906			_a7 _bcbc _ccopycat _d2 _eepcn _f20 _gy-gencatlg
942			_2ddc _cBK _06
999			_c8270 _d8270