000			01494cam a22003614a 4500
001			14105581
005			20180508020003.0
008			050912s2006 nyua b 001 0 eng c
010			_a 2005933746
015			_aGBA581849 _2bnb
016	7		_a013301275 _2Uk
020			_a9788181288554
035			_a(OCoLC)ocm61756769
040			_aUKM _cSTF _dUKM _dOHX _dBGU _dIXA _dBAKER _dDLC
042			_apcc
050	0	0	_aT174.7 _b.L86 2006
082			_a621.381 _bLUN-N
100	1		_aLundstrom, Mark
245	1	0	_aNanoscale transistors : _bdevice physics, modeling and simulation _cMark S. Lundstrom, Jing Guo.
260			_aNew York : _bSpringer, _cc2006.
300			_avi, 217 p. : _bill. ; _c24 cm.
504			_aIncludes bibliographical references and index.
650		0	_aNanotechnology.
650		0	_aMetal oxide semiconductor field-effect transistors _xMathematical models.
650		0	_aNanostructured materials _xMathematical models.
700	1		_aGuo, Jing
856	4	1	_3Table of contents only _uhttp://www.loc.gov/catdir/toc/fy0608/2005933746.html
856	4	2	_3Publisher description _uhttp://www.loc.gov/catdir/enhancements/fy0663/2005933746-d.html
856	4	2	_3Contributor biographical information _uhttp://www.loc.gov/catdir/enhancements/fy0819/2005933746-b.html
906			_a7 _bcbc _cpccadap _d2 _eepcn _f20 _gy-gencatlg
942			_2ddc _cBK _02
999			_c8390 _d8390